Visual Photonics Epitaxy Co., Ltd.

Taiwan Stock Exchange 2455.TW

Visual Photonics Epitaxy Co., Ltd. Net Cash Used For Investing Activities for the year ending December 31, 2023: USD -2.32 M

Visual Photonics Epitaxy Co., Ltd. Net Cash Used For Investing Activities is USD -2.32 M for the year ending December 31, 2023, a 84.87% change year over year. Net cash used for investing activities is total cash inflows and outflows related to activities intended to generate future income and cash flows from investments.

Visual Photonics Epitaxy Co., Ltd. Net Cash Used For Investing Activities for the year ending December 31, 2022 was USD -15.34 M, a 9.53% change year over year.
Visual Photonics Epitaxy Co., Ltd. Net Cash Used For Investing Activities for the year ending December 31, 2021 was USD -16.95 M, a -390.32% change year over year.
Visual Photonics Epitaxy Co., Ltd. Net Cash Used For Investing Activities for the year ending December 31, 2020 was USD -3.46 M, a 46.94% change year over year.
Visual Photonics Epitaxy Co., Ltd. Net Cash Used For Investing Activities for the year ending December 31, 2019 was USD -6.52 M, a 84.31% change year over year.

Key data

Date	Net Cash Used For Investing Activities	Net Cash Used Provided By Financing Activities	Dividends Paid	Capital Expenditure

Taiwan Stock Exchange: 2455.TW

Visual Photonics Epitaxy Co., Ltd.

CEO	Dr. Chao-Hsing Huang Ph.D.
IPO Date	Jan. 25, 2002
Location	Taiwan
Headquarters	No. 16, Gongye 1st Road
Employees	308
Sector	Technology
Industries Semiconductors Hardware & Electronics

Description

Visual Photonics Epitaxy Co., Ltd. researches, develops, manufactures, and sells optoelectronic semiconductors epitaxy and optoelectronic components products in Taiwan, the United States, and internationally. The company offers gallium arsenide (GaAs) heterojunction bipolar transistor (HBT), low turn-on voltage HBT, high voltage HBT, InP HBT and HEMT, GaAs pseudomorphic high electron mobility transistor (PHEMT) and BiHEMT, and GaN epi wafers. It also provides GaAs PD, InGaAs PD and APD, Zn diffusion ready InGaAs PD and APD, long wavelength InGaAs PD, F-P and DFB LD, and VCSEL epi wafers; and solar cell epi wafers, as well as customerized epi foundry services. The company was incorporated in 1996 and is based in Taoyuan City, Taiwan.

Key trends

Past 5 years