IntelliEPI Inc. (Cayman)

Taipei Exchange 4971.TWO

IntelliEPI Inc. (Cayman) Net Income for the year ending December 31, 2023: USD 271.76 K

IntelliEPI Inc. (Cayman) Net Income is USD 271.76 K for the year ending December 31, 2023, a -94.72% change year over year. Net income is the total profit earned by a company after deducting all expenses, including taxes and non-controlling interest.
  • IntelliEPI Inc. (Cayman) Net Income for the year ending December 31, 2022 was USD 5.15 M, a 62.83% change year over year.
  • IntelliEPI Inc. (Cayman) Net Income for the year ending December 31, 2021 was USD 3.16 M, a 34.96% change year over year.
  • IntelliEPI Inc. (Cayman) Net Income for the year ending December 31, 2020 was USD 2.34 M, a 1.15% change year over year.
  • IntelliEPI Inc. (Cayman) Net Income for the year ending December 31, 2019 was USD 2.32 M.
Key data
Date Net Income EPS (Diluted) Shares (Diluted, Weighted) Net Income Margin
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Taipei Exchange: 4971.TWO

IntelliEPI Inc. (Cayman)

CEO Dr. Yung-Chung Kao
IPO Date July 24, 2013
Location United States
Headquarters 1250 East Collins Boulevard
Employees 89
Sector Technology
Industries
Description

IntelliEPI Inc. (Cayman), through its subsidiaries, produces and sells epitaxy wafers of compound semiconductor for use in wireless communications, data transmission and national defense in the United States, Germany, China, Japan, Korea, and internationally. The company utilizes its proprietary real-time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacturing of epi-wafers on gallium arsenide (GaAs) and indium phosphide (InP) substrates. Its GaAs-based products include pseudo-morpic high electron mobility transistors and MHEMT products; and InP-based products comprise hetero-junction bi-polar transistors, HEMT, RTT, and RTD. The company also provides Sb based products, such as type II SLS photodetectors, GaAsSb-base InP HBT, and epi-ready GaSb substrates; and mismatched Epi products comprising III-V on Si, III-V on Ge, and high in content InGaAs on Si. In addition, it offers optoelectronics, including avalanche photo diodes, lasers, high-speed high-frequency surface-emitting lasers, optical receivers, quantum well-infrared photodetectors, modulators, and quantum cascade lasers, as well as infrared light detectors. The company was founded in 1999 and is headquartered in Richardson, Texas.

StockViz Staff

January 15, 2025

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