IntelliEPI Inc. (Cayman)

Taipei Exchange 4971.TWO

IntelliEPI Inc. (Cayman) Price to Earnings Ratio (P/E) on January 14, 2025: 330.02

IntelliEPI Inc. (Cayman) Price to Earnings Ratio (P/E) is 330.02 on January 14, 2025, a 45.57% change year over year. Price to earnings ratio compares the stock price to earnings per share; higher P/E suggests expectations for future earnings growth.
  • IntelliEPI Inc. (Cayman) 52-week high Price to Earnings Ratio (P/E) is 430.15 on December 04, 2024, which is 30.34% above the current Price to Earnings Ratio (P/E).
  • IntelliEPI Inc. (Cayman) 52-week low Price to Earnings Ratio (P/E) is 189.36 on August 06, 2024, which is -42.62% below the current Price to Earnings Ratio (P/E).
  • IntelliEPI Inc. (Cayman) average Price to Earnings Ratio (P/E) for the last 52 weeks is 317.76.
Key data
Date Price to Earnings Ratio (P/E) Price to Sales Ratio (P/S) Price to Book Ratio (P/B) Dividend Yield
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Taipei Exchange: 4971.TWO

IntelliEPI Inc. (Cayman)

CEO Dr. Yung-Chung Kao
IPO Date July 24, 2013
Location United States
Headquarters 1250 East Collins Boulevard
Employees 89
Sector Technology
Industries
Description

IntelliEPI Inc. (Cayman), through its subsidiaries, produces and sells epitaxy wafers of compound semiconductor for use in wireless communications, data transmission and national defense in the United States, Germany, China, Japan, Korea, and internationally. The company utilizes its proprietary real-time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacturing of epi-wafers on gallium arsenide (GaAs) and indium phosphide (InP) substrates. Its GaAs-based products include pseudo-morpic high electron mobility transistors and MHEMT products; and InP-based products comprise hetero-junction bi-polar transistors, HEMT, RTT, and RTD. The company also provides Sb based products, such as type II SLS photodetectors, GaAsSb-base InP HBT, and epi-ready GaSb substrates; and mismatched Epi products comprising III-V on Si, III-V on Ge, and high in content InGaAs on Si. In addition, it offers optoelectronics, including avalanche photo diodes, lasers, high-speed high-frequency surface-emitting lasers, optical receivers, quantum well-infrared photodetectors, modulators, and quantum cascade lasers, as well as infrared light detectors. The company was founded in 1999 and is headquartered in Richardson, Texas.

StockViz Staff

January 15, 2025

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